Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method

A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removin...

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Bibliographische Detailangaben

Hauptverfasser:	Zhou, Xiang, Drewery, John, Kamp, Tom A, Kimura, Yoshie, Zhang, Duming, Xu, Chen, Paterson, Alex
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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