Spin orbit torque magnetic random access memory structures and methods for fabrication

In one example embodiment, a SOT-MRAM includes a storage unit having a CoαXβPtγ based free layer. The storage unit includes a bottom electrode and the CoαXβPtγ based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoαXβPtγ based fr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Deng, Jinyu, Liu, Liang, Chen, Jingsheng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!