Spin orbit torque magnetic random access memory structures and methods for fabrication

Spin orbit torque magnetic random access memory structures and methods for fabrication

In one example embodiment, a SOT-MRAM includes a storage unit having a CoαXβPtγ based free layer. The storage unit includes a bottom electrode and the CoαXβPtγ based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoαXβPtγ based fr...

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Hauptverfasser: Deng, Jinyu, Liu, Liang, Chen, Jingsheng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Liu, Liang
Chen, Jingsheng
description In one example embodiment, a SOT-MRAM includes a storage unit having a CoαXβPtγ based free layer. The storage unit includes a bottom electrode and the CoαXβPtγ based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoαXβPtγ based free layer, and a fixed layer over the tunnel barrier layer. The CoαXβPtγ based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title Spin orbit torque magnetic random access memory structures and methods for fabrication
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