Electron gun and electron microscope

An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emi...

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Hauptverfasser: Garcia Berrios, Edgardo, Xiao-Li, Yinying, Fielden, John, Chuang, Yung-Ho Alex, Nagao, Masayoshi
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creator Garcia Berrios, Edgardo
Xiao-Li, Yinying
Fielden, John
Chuang, Yung-Ho Alex
Nagao, Masayoshi
description An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10943760B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10943760B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10943760B23</originalsourceid><addsrcrecordid>eNrjZFBxzUlNLinKz1NIL81TSMxLUUiFCeRmJhflFyfnF6TyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDA0sTY3MzAycjY2LUAAAWkicE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electron gun and electron microscope</title><source>esp@cenet</source><creator>Garcia Berrios, Edgardo ; Xiao-Li, Yinying ; Fielden, John ; Chuang, Yung-Ho Alex ; Nagao, Masayoshi</creator><creatorcontrib>Garcia Berrios, Edgardo ; Xiao-Li, Yinying ; Fielden, John ; Chuang, Yung-Ho Alex ; Nagao, Masayoshi</creatorcontrib><description>An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210309&amp;DB=EPODOC&amp;CC=US&amp;NR=10943760B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210309&amp;DB=EPODOC&amp;CC=US&amp;NR=10943760B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Garcia Berrios, Edgardo</creatorcontrib><creatorcontrib>Xiao-Li, Yinying</creatorcontrib><creatorcontrib>Fielden, John</creatorcontrib><creatorcontrib>Chuang, Yung-Ho Alex</creatorcontrib><creatorcontrib>Nagao, Masayoshi</creatorcontrib><title>Electron gun and electron microscope</title><description>An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBxzUlNLinKz1NIL81TSMxLUUiFCeRmJhflFyfnF6TyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDA0sTY3MzAycjY2LUAAAWkicE</recordid><startdate>20210309</startdate><enddate>20210309</enddate><creator>Garcia Berrios, Edgardo</creator><creator>Xiao-Li, Yinying</creator><creator>Fielden, John</creator><creator>Chuang, Yung-Ho Alex</creator><creator>Nagao, Masayoshi</creator><scope>EVB</scope></search><sort><creationdate>20210309</creationdate><title>Electron gun and electron microscope</title><author>Garcia Berrios, Edgardo ; Xiao-Li, Yinying ; Fielden, John ; Chuang, Yung-Ho Alex ; Nagao, Masayoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10943760B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Garcia Berrios, Edgardo</creatorcontrib><creatorcontrib>Xiao-Li, Yinying</creatorcontrib><creatorcontrib>Fielden, John</creatorcontrib><creatorcontrib>Chuang, Yung-Ho Alex</creatorcontrib><creatorcontrib>Nagao, Masayoshi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Garcia Berrios, Edgardo</au><au>Xiao-Li, Yinying</au><au>Fielden, John</au><au>Chuang, Yung-Ho Alex</au><au>Nagao, Masayoshi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electron gun and electron microscope</title><date>2021-03-09</date><risdate>2021</risdate><abstract>An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title Electron gun and electron microscope
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T22%3A25%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Garcia%20Berrios,%20Edgardo&rft.date=2021-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10943760B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true