Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices

Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices

The subject matter disclosed herein relates to wide band gap semiconductor power devices and, more specifically, to high-energy implantation masks used in forming silicon carbide (SiC) power devices, such as charge balanced (CB) SiC power devices. An intermediate semiconductor device structure inclu...

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Hauptverfasser: Hawkins, William Gregg, Lu, Shaoxin, Ghandi, Reza, Bauer, Christopher
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Hawkins, William Gregg
Lu, Shaoxin
Ghandi, Reza
Bauer, Christopher
description The subject matter disclosed herein relates to wide band gap semiconductor power devices and, more specifically, to high-energy implantation masks used in forming silicon carbide (SiC) power devices, such as charge balanced (CB) SiC power devices. An intermediate semiconductor device structure includes a SiC substrate layer having a first conductivity type and silicon carbide (SiC) epitaxial (epi) layer having the first conductivity type disposed on the SiC substrate layer. The intermediate device structure also includes a silicon high-energy implantation mask (SiHEIM) disposed directly on a first portion of the SiC epi layer and having a thickness between 5 micrometers (μm) and 20 μm. The SiHEIM is configured to block implantation of the first portion of the SiC epi layer during a high-energy implantation process having an implantation energy greater than 500 kiloelectron volts (keV).
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices
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