Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof
A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substr...
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| creator | Ueno, Ryuji Sunamoto, Masatoshi |
| description | A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film. |
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A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210302&DB=EPODOC&CC=US&NR=10937657B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210302&DB=EPODOC&CC=US&NR=10937657B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ueno, Ryuji</creatorcontrib><creatorcontrib>Sunamoto, Masatoshi</creatorcontrib><title>Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof</title><description>A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjU2KQjEQhN_Ghah3aA8g-MMobmeYwb26lp6kooGk83hJlHcXD2sLzqyFhq6iq-sbNvc9ojdJbDUldWRx9QbkxYRqvZyJqQObwlIoonCgwD0053ObMiz9otwAIdYJNXqpUUVIPTkfVIrVCsP62ee_iv-L2kuy5BQcWapTUO2e1HJBh-TGzcBxyJi89qiZ_nwfvnYztOmE3LKBoJyO-8V8u9qsPzafy9U7mQcB0lRH</recordid><startdate>20210302</startdate><enddate>20210302</enddate><creator>Ueno, Ryuji</creator><creator>Sunamoto, Masatoshi</creator><scope>EVB</scope></search><sort><creationdate>20210302</creationdate><title>Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof</title><author>Ueno, Ryuji ; Sunamoto, Masatoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10937657B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Ueno, Ryuji</creatorcontrib><creatorcontrib>Sunamoto, Masatoshi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ueno, Ryuji</au><au>Sunamoto, Masatoshi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof</title><date>2021-03-02</date><risdate>2021</risdate><abstract>A technology capable of reducing contamination of a semiconductor substrate above which a nickel film is disposed is provided. A semiconductor device includes: a semiconductor substrate; an aluminum alloy film disposed on at least one of a front surface and a back surface of the semiconductor substrate; a catalyst metal film disposed above the aluminum alloy film and exhibiting catalytic activity for autocatalytic reaction that deposits nickel; an electroless nickel plating film disposed on the catalyst metal film; and a reactant layer disposed between the aluminum alloy film and the catalyst metal film and containing metal of the catalyst metal film.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof |
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