Methods of forming silicon-containing dielectric materials and methods of forming a semiconductor device comprising nitrogen radicals and oxygen-containing, silicon-containing, or carbon-containing precursors

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Omstead, Thomas R, Franklin, Cole S
Format: Patent
Sprache:eng
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