Semiconductor device
According to one embodiment, a semiconductor device includes an oxide semiconductor layer, a first electrode, a second electrode, and a control electrode. The oxide semiconductor layer includes tin and tungsten. An average coordination number of oxygen atoms to tin atoms is greater than 3 but less t...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | According to one embodiment, a semiconductor device includes an oxide semiconductor layer, a first electrode, a second electrode, and a control electrode. The oxide semiconductor layer includes tin and tungsten. An average coordination number of oxygen atoms to tin atoms is greater than 3 but less than 4. The first electrode is electrically connected to a first end portion of the oxide semiconductor layer. The second electrode is electrically connected to a second end portion of the oxide semiconductor layer on a side opposite to the first end portion. The control electrode opposes a portion of the oxide semiconductor layer between the first end portion and the second end portion. |
|---|