Thermal processing susceptor
In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between...
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| creator | Mack, James Francis Bautista, Kevin Joseph Li, Xuebin Ngo, Anhthu Myo, Nyi O Zhu, Zuoming Cong, Zhepeng Tong, Edric Brillhart, Paul Ramachandran, Balasubramanian Shah, Kartik Lo, Kin Pong Huang, Yi-Chiau Chang, Anzhong Chu, Schubert S Ye, Zhiyuan |
| description | In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10930543B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10930543B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10930543B23</originalsourceid><addsrcrecordid>eNrjZJAJyUgtyk3MUSgoyk9OLS7OzEtXKC4tTk4tKMkv4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhgaWxgamJsZORsbEqAEA0eYkWw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thermal processing susceptor</title><source>esp@cenet</source><creator>Mack, James Francis ; Bautista, Kevin Joseph ; Li, Xuebin ; Ngo, Anhthu ; Myo, Nyi O ; Zhu, Zuoming ; Cong, Zhepeng ; Tong, Edric ; Brillhart, Paul ; Ramachandran, Balasubramanian ; Shah, Kartik ; Lo, Kin Pong ; Huang, Yi-Chiau ; Chang, Anzhong ; Chu, Schubert S ; Ye, Zhiyuan</creator><creatorcontrib>Mack, James Francis ; Bautista, Kevin Joseph ; Li, Xuebin ; Ngo, Anhthu ; Myo, Nyi O ; Zhu, Zuoming ; Cong, Zhepeng ; Tong, Edric ; Brillhart, Paul ; Ramachandran, Balasubramanian ; Shah, Kartik ; Lo, Kin Pong ; Huang, Yi-Chiau ; Chang, Anzhong ; Chu, Schubert S ; Ye, Zhiyuan</creatorcontrib><description>In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; APPARATUS THEREFOR ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SPRAYING OR ATOMISING IN GENERAL ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210223&DB=EPODOC&CC=US&NR=10930543B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210223&DB=EPODOC&CC=US&NR=10930543B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mack, James Francis</creatorcontrib><creatorcontrib>Bautista, Kevin Joseph</creatorcontrib><creatorcontrib>Li, Xuebin</creatorcontrib><creatorcontrib>Ngo, Anhthu</creatorcontrib><creatorcontrib>Myo, Nyi O</creatorcontrib><creatorcontrib>Zhu, Zuoming</creatorcontrib><creatorcontrib>Cong, Zhepeng</creatorcontrib><creatorcontrib>Tong, Edric</creatorcontrib><creatorcontrib>Brillhart, Paul</creatorcontrib><creatorcontrib>Ramachandran, Balasubramanian</creatorcontrib><creatorcontrib>Shah, Kartik</creatorcontrib><creatorcontrib>Lo, Kin Pong</creatorcontrib><creatorcontrib>Huang, Yi-Chiau</creatorcontrib><creatorcontrib>Chang, Anzhong</creatorcontrib><creatorcontrib>Chu, Schubert S</creatorcontrib><creatorcontrib>Ye, Zhiyuan</creatorcontrib><title>Thermal processing susceptor</title><description>In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>APPARATUS THEREFOR</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAJyUgtyk3MUSgoyk9OLS7OzEtXKC4tTk4tKMkv4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhgaWxgamJsZORsbEqAEA0eYkWw</recordid><startdate>20210223</startdate><enddate>20210223</enddate><creator>Mack, James Francis</creator><creator>Bautista, Kevin Joseph</creator><creator>Li, Xuebin</creator><creator>Ngo, Anhthu</creator><creator>Myo, Nyi O</creator><creator>Zhu, Zuoming</creator><creator>Cong, Zhepeng</creator><creator>Tong, Edric</creator><creator>Brillhart, Paul</creator><creator>Ramachandran, Balasubramanian</creator><creator>Shah, Kartik</creator><creator>Lo, Kin Pong</creator><creator>Huang, Yi-Chiau</creator><creator>Chang, Anzhong</creator><creator>Chu, Schubert S</creator><creator>Ye, Zhiyuan</creator><scope>EVB</scope></search><sort><creationdate>20210223</creationdate><title>Thermal processing susceptor</title><author>Mack, James Francis ; Bautista, Kevin Joseph ; Li, Xuebin ; Ngo, Anhthu ; Myo, Nyi O ; Zhu, Zuoming ; Cong, Zhepeng ; Tong, Edric ; Brillhart, Paul ; Ramachandran, Balasubramanian ; Shah, Kartik ; Lo, Kin Pong ; Huang, Yi-Chiau ; Chang, Anzhong ; Chu, Schubert S ; Ye, Zhiyuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10930543B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>APPARATUS THEREFOR</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Mack, James Francis</creatorcontrib><creatorcontrib>Bautista, Kevin Joseph</creatorcontrib><creatorcontrib>Li, Xuebin</creatorcontrib><creatorcontrib>Ngo, Anhthu</creatorcontrib><creatorcontrib>Myo, Nyi O</creatorcontrib><creatorcontrib>Zhu, Zuoming</creatorcontrib><creatorcontrib>Cong, Zhepeng</creatorcontrib><creatorcontrib>Tong, Edric</creatorcontrib><creatorcontrib>Brillhart, Paul</creatorcontrib><creatorcontrib>Ramachandran, Balasubramanian</creatorcontrib><creatorcontrib>Shah, Kartik</creatorcontrib><creatorcontrib>Lo, Kin Pong</creatorcontrib><creatorcontrib>Huang, Yi-Chiau</creatorcontrib><creatorcontrib>Chang, Anzhong</creatorcontrib><creatorcontrib>Chu, Schubert S</creatorcontrib><creatorcontrib>Ye, Zhiyuan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mack, James Francis</au><au>Bautista, Kevin Joseph</au><au>Li, Xuebin</au><au>Ngo, Anhthu</au><au>Myo, Nyi O</au><au>Zhu, Zuoming</au><au>Cong, Zhepeng</au><au>Tong, Edric</au><au>Brillhart, Paul</au><au>Ramachandran, Balasubramanian</au><au>Shah, Kartik</au><au>Lo, Kin Pong</au><au>Huang, Yi-Chiau</au><au>Chang, Anzhong</au><au>Chu, Schubert S</au><au>Ye, Zhiyuan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thermal processing susceptor</title><date>2021-02-23</date><risdate>2021</risdate><abstract>In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPARATUS THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Thermal processing susceptor |
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