Transistor and methods of forming transistors

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. An upper material is directly above a lower material. The upper material is in at...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Nahar, Manuj, Fan, Darwin Franseda, Antonov, Vassil N, Moballegh, Ali
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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