Memory device

Memory device

According to one embodiment, a device includes: a memory cell between the first and second interconnects; a first circuit in a domain having a range of a first voltage to a second voltage higher than the first voltage, the first circuit controlling supply of the second voltage to the first interconn...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Shirai, Yutaka
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment, a device includes: a memory cell between the first and second interconnects; a first circuit in a domain having a range of a first voltage to a second voltage higher than the first voltage, the first circuit controlling supply of the second voltage to the first interconnect; a second circuit in a domain having a range of a third voltage lower than the first voltage to the first voltage, the second circuit controlling supply of the third voltage to the second interconnect; and a third circuit in a domain having a range of a fourth voltage lower than the first voltage to a fifth voltage higher than the first voltage, the third circuit controlling supply of a sixth voltage to the first and second interconnects.