Thin film transistor substrate and display using the same
Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycry...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Park, Moonho Ko, Seunghyo Lee, Youngjang Cho, Seongpil Lee, Sungjin Son, Kyungmo Noh, Sangsoon Jeong, Mijin Lee, Sohyung Park, Jaehoon |
| description | Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10903246B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10903246B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10903246B23</originalsourceid><addsrcrecordid>eNrjZLAMycjMU0jLzMlVKClKzCvOLC7JL1IoLk0qBnJLUhUS81IUUjKLC3ISKxVKizPz0hVKMlIVihNzU3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGBpYGxkYmZk5ExMWoAV6gu7Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thin film transistor substrate and display using the same</title><source>esp@cenet</source><creator>Park, Moonho ; Ko, Seunghyo ; Lee, Youngjang ; Cho, Seongpil ; Lee, Sungjin ; Son, Kyungmo ; Noh, Sangsoon ; Jeong, Mijin ; Lee, Sohyung ; Park, Jaehoon</creator><creatorcontrib>Park, Moonho ; Ko, Seunghyo ; Lee, Youngjang ; Cho, Seongpil ; Lee, Sungjin ; Son, Kyungmo ; Noh, Sangsoon ; Jeong, Mijin ; Lee, Sohyung ; Park, Jaehoon</creatorcontrib><description>Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210126&DB=EPODOC&CC=US&NR=10903246B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210126&DB=EPODOC&CC=US&NR=10903246B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Park, Moonho</creatorcontrib><creatorcontrib>Ko, Seunghyo</creatorcontrib><creatorcontrib>Lee, Youngjang</creatorcontrib><creatorcontrib>Cho, Seongpil</creatorcontrib><creatorcontrib>Lee, Sungjin</creatorcontrib><creatorcontrib>Son, Kyungmo</creatorcontrib><creatorcontrib>Noh, Sangsoon</creatorcontrib><creatorcontrib>Jeong, Mijin</creatorcontrib><creatorcontrib>Lee, Sohyung</creatorcontrib><creatorcontrib>Park, Jaehoon</creatorcontrib><title>Thin film transistor substrate and display using the same</title><description>Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMycjMU0jLzMlVKClKzCvOLC7JL1IoLk0qBnJLUhUS81IUUjKLC3ISKxVKizPz0hVKMlIVihNzU3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGBpYGxkYmZk5ExMWoAV6gu7Q</recordid><startdate>20210126</startdate><enddate>20210126</enddate><creator>Park, Moonho</creator><creator>Ko, Seunghyo</creator><creator>Lee, Youngjang</creator><creator>Cho, Seongpil</creator><creator>Lee, Sungjin</creator><creator>Son, Kyungmo</creator><creator>Noh, Sangsoon</creator><creator>Jeong, Mijin</creator><creator>Lee, Sohyung</creator><creator>Park, Jaehoon</creator><scope>EVB</scope></search><sort><creationdate>20210126</creationdate><title>Thin film transistor substrate and display using the same</title><author>Park, Moonho ; Ko, Seunghyo ; Lee, Youngjang ; Cho, Seongpil ; Lee, Sungjin ; Son, Kyungmo ; Noh, Sangsoon ; Jeong, Mijin ; Lee, Sohyung ; Park, Jaehoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10903246B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, Moonho</creatorcontrib><creatorcontrib>Ko, Seunghyo</creatorcontrib><creatorcontrib>Lee, Youngjang</creatorcontrib><creatorcontrib>Cho, Seongpil</creatorcontrib><creatorcontrib>Lee, Sungjin</creatorcontrib><creatorcontrib>Son, Kyungmo</creatorcontrib><creatorcontrib>Noh, Sangsoon</creatorcontrib><creatorcontrib>Jeong, Mijin</creatorcontrib><creatorcontrib>Lee, Sohyung</creatorcontrib><creatorcontrib>Park, Jaehoon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Moonho</au><au>Ko, Seunghyo</au><au>Lee, Youngjang</au><au>Cho, Seongpil</au><au>Lee, Sungjin</au><au>Son, Kyungmo</au><au>Noh, Sangsoon</au><au>Jeong, Mijin</au><au>Lee, Sohyung</au><au>Park, Jaehoon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin film transistor substrate and display using the same</title><date>2021-01-26</date><risdate>2021</risdate><abstract>Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10903246B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Thin film transistor substrate and display using the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T00%3A09%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Park,%20Moonho&rft.date=2021-01-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10903246B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |