Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising...

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Bibliographische Detailangaben
Hauptverfasser:	Lauter, Michael, Usman Ibrahim, Sheik Ansar, Leunissen, Leonardus, Reichardt, Robert, Proelss, Julian, Lan, Yongqing, Wei, Te Yu, Golzarian, Reza M, Guevenc, Haci Osman, Siebert, Max
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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