Devices for LDMOS and other MOS transistors with hybrid contact

A lateral DMOS transistor structure includes a substrate of a first dopant polarity, a body region of the first dopant polarity, a source region, a drift region of a second dopant polarity, a drain region, a channel region, a gate structure over the channel region, a hybrid contact implant, of the s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Richards, Jr., William R, Liu, Zhengchao, Toner, Brendan, Dolny, Gary M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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