Methods of erasing data in nonvolatile memory devices and nonvolatile memory devices performing the same

A method of operating a nonvolatile memory device includes erasing data within a NAND string of memory cells within the memory device by applying a non-zero erase voltage to a source/drain terminal at a first end of the NAND string. This erase voltage is applied concurrently with establishing gate-i...

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Bibliographische Detailangaben

Hauptverfasser:	Nam, Sang-Wan, Yoon, Chi-Weon, Kwak, Dong-Hun
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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