Semiconductor-on-insulator substrate for RF applications

A semiconductor-on-insulator substrate for use in RF applications, such as a silicon-on-insulator substrate, comprises a semiconductor top layer, a buried oxide layer and a passivation layer over a support substrate. In addition, a penetration layer is provided between the passivation layer and the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Castex, Arnaud, Kononchuk, Oleg
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!