Method for providing a hermetically sealed feedthrough with co-fired filled via for an active implantable medical device
A method for making a dielectric substrate configured for incorporation into a hermetically sealed feedthrough is described. The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The g...
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creator | Tang, Xiaohong Marzano, Thomas Frustaci, Dominick J Frysz, Christine A Woods, Jason Seitz, Keith W Stevenson, Robert A Brendel, Richard L Thiebolt, William C Winn, Steven W |
description | A method for making a dielectric substrate configured for incorporation into a hermetically sealed feedthrough is described. The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours; a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours; and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. The dielectric substrate is hermetically sealed to the ferrule with the sintered platinum material in the via hole providing a conductive pathway from a body fluid side to a device side of the ferrule. |
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The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours; a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours; and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. The dielectric substrate is hermetically sealed to the ferrule with the sintered platinum material in the via hole providing a conductive pathway from a body fluid side to a device side of the ferrule.</description><language>eng</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; CASTING ; CHEMISTRY ; CURRENT COLLECTORS ; ELECTRICITY ; ELECTROTHERAPY ; FERROUS OR NON-FERROUS ALLOYS ; HUMAN NECESSITIES ; HYGIENE ; LINE CONNECTORS ; MAGNETOTHERAPY ; MAKING METALLIC POWDER ; MANUFACTURE OF ARTICLES FROM METALLIC POWDER ; MEDICAL OR VETERINARY SCIENCE ; METALLURGY ; PERFORMING OPERATIONS ; POWDER METALLURGY ; RADIATION THERAPY ; TRANSPORTING ; TREATMENT OF ALLOYS OR NON-FERROUS METALS ; ULTRASOUND THERAPY ; WORKING METALLIC POWDER</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210105&DB=EPODOC&CC=US&NR=10881867B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210105&DB=EPODOC&CC=US&NR=10881867B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tang, Xiaohong</creatorcontrib><creatorcontrib>Marzano, Thomas</creatorcontrib><creatorcontrib>Frustaci, Dominick J</creatorcontrib><creatorcontrib>Frysz, Christine A</creatorcontrib><creatorcontrib>Woods, Jason</creatorcontrib><creatorcontrib>Seitz, Keith W</creatorcontrib><creatorcontrib>Stevenson, Robert A</creatorcontrib><creatorcontrib>Brendel, Richard L</creatorcontrib><creatorcontrib>Thiebolt, William C</creatorcontrib><creatorcontrib>Winn, Steven W</creatorcontrib><title>Method for providing a hermetically sealed feedthrough with co-fired filled via for an active implantable medical device</title><description>A method for making a dielectric substrate configured for incorporation into a hermetically sealed feedthrough is described. The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours; a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours; and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. 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The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours; a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours; and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. The dielectric substrate is hermetically sealed to the ferrule with the sintered platinum material in the via hole providing a conductive pathway from a body fluid side to a device side of the ferrule.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ALLOYS BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CASTING CHEMISTRY CURRENT COLLECTORS ELECTRICITY ELECTROTHERAPY FERROUS OR NON-FERROUS ALLOYS HUMAN NECESSITIES HYGIENE LINE CONNECTORS MAGNETOTHERAPY MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER MEDICAL OR VETERINARY SCIENCE METALLURGY PERFORMING OPERATIONS POWDER METALLURGY RADIATION THERAPY TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS ULTRASOUND THERAPY WORKING METALLIC POWDER |
title | Method for providing a hermetically sealed feedthrough with co-fired filled via for an active implantable medical device |
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