Method of fabricating a semiconductor device

A method of fabricating the semiconductor device includes the following steps. Forming a sacrificial portion at a first end of an upper electrode layer before a passivation layer is formed so that it supports a corresponding end portion of the passivation layer, making the passivation layer not susp...

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Bibliographische Detailangaben
Hauptverfasser:	Wang, Chong, Wang, Yongtao, Xiang, Shaohua, Cai, Minhao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY DEAF-AID SETS ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS PUBLIC ADDRESS SYSTEMS RESONATORS
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Beschreibung
Zusammenfassung:	A method of fabricating the semiconductor device includes the following steps. Forming a sacrificial portion at a first end of an upper electrode layer before a passivation layer is formed so that it supports a corresponding end portion of the passivation layer, making the passivation layer not suspended at all. In this way, the suspended portion of the passivation layer will not be damaged during the formation of a contact pad. In addition, subsequent to the formation of the contact pad, removing the sacrificial portion, freeing up a space under the end portion of the passivation layer so that the end portion itself becomes a suspended portion. This can ensure performance of the resulting semiconductor device.