3D semiconductor devices including a supporter and methods of forming the same

A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a pl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kim, Ee Jou, Shin, Joong Shik, Hong, Sang Jun
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kim, Ee Jou
Shin, Joong Shik
Hong, Sang Jun
description A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10868041B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10868041B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10868041B23</originalsourceid><addsrcrecordid>eNqNyj0KAjEQBtA0FqLeYTyAsOuKbO0fVjZqvYTkixvYZEIm8fwieACr17y5unUnEgRvONpqCmeyeHsDIR_NVK2PL9IkNSXOBZl0tBRQRrZC7MhxDt9SRpDogKWaOT0JVj8Xan05P47XDRIPkKQNIsrwvLdNv--bXXvYdv-cDwRcNoE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>3D semiconductor devices including a supporter and methods of forming the same</title><source>esp@cenet</source><creator>Kim, Ee Jou ; Shin, Joong Shik ; Hong, Sang Jun</creator><creatorcontrib>Kim, Ee Jou ; Shin, Joong Shik ; Hong, Sang Jun</creatorcontrib><description>A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201215&amp;DB=EPODOC&amp;CC=US&amp;NR=10868041B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20201215&amp;DB=EPODOC&amp;CC=US&amp;NR=10868041B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Ee Jou</creatorcontrib><creatorcontrib>Shin, Joong Shik</creatorcontrib><creatorcontrib>Hong, Sang Jun</creatorcontrib><title>3D semiconductor devices including a supporter and methods of forming the same</title><description>A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0KAjEQBtA0FqLeYTyAsOuKbO0fVjZqvYTkixvYZEIm8fwieACr17y5unUnEgRvONpqCmeyeHsDIR_NVK2PL9IkNSXOBZl0tBRQRrZC7MhxDt9SRpDogKWaOT0JVj8Xan05P47XDRIPkKQNIsrwvLdNv--bXXvYdv-cDwRcNoE</recordid><startdate>20201215</startdate><enddate>20201215</enddate><creator>Kim, Ee Jou</creator><creator>Shin, Joong Shik</creator><creator>Hong, Sang Jun</creator><scope>EVB</scope></search><sort><creationdate>20201215</creationdate><title>3D semiconductor devices including a supporter and methods of forming the same</title><author>Kim, Ee Jou ; Shin, Joong Shik ; Hong, Sang Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10868041B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Ee Jou</creatorcontrib><creatorcontrib>Shin, Joong Shik</creatorcontrib><creatorcontrib>Hong, Sang Jun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Ee Jou</au><au>Shin, Joong Shik</au><au>Hong, Sang Jun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>3D semiconductor devices including a supporter and methods of forming the same</title><date>2020-12-15</date><risdate>2020</risdate><abstract>A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10868041B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title 3D semiconductor devices including a supporter and methods of forming the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T23%3A17%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Ee%20Jou&rft.date=2020-12-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10868041B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true