High density capacitors formed from thin vertical semiconductor structures such as FINFETs

A vertical structure may be used as a high density capacitance for an integrated circuit. These thin vertical structures can be configured to operate as an insulator in a metal-insulator-metal (MIM) capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufact...

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Bibliographische Detailangaben

Hauptverfasser:	Shi, Zhonghai, Tarabbia, Marc L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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