Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a plurality of first interconnect layers, first and second memory pillars, and a plurality of first plugs. The plurality of first interconnect layers include a first array region where the first memory pillar penetrates the pluralit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Oike, Go, Sugisaki, Tsuyoshi
Format: Patent
Sprache:eng
Schlagworte:
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