Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method
Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of...
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| creator | Bozkurt, Murat Van Der Schaar, Maurits Den Boef, Arie Jeffrey Sanguinetti, Gonzalo Roberto |
| description | Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10859923B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10859923B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10859923B23</originalsourceid><addsrcrecordid>eNqNjbsKwkAQRbexEPUfxj6CJgimVRQbK7UOw2Y2Wck-2JkV_HuN-AFWtznn3Kl6XEj60EIw4Ag5J-s7QGBJWUtOVID1HEmLDR4wRkwomQsY7EfrEsbeauAXCzlA30JLT6sJHPpscCyMPff9mKuJwYFp8duZWp6Ot8N5RTE0xBE1eZLmft2sd9u6Lqt9Wf3DvAHtYkIC</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method</title><source>esp@cenet</source><creator>Bozkurt, Murat ; Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Sanguinetti, Gonzalo Roberto</creator><creatorcontrib>Bozkurt, Murat ; Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Sanguinetti, Gonzalo Roberto</creatorcontrib><description>Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.</description><language>eng</language><subject>ACCESSORIES THEREFOR ; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES ; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM ; APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TESTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201208&DB=EPODOC&CC=US&NR=10859923B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201208&DB=EPODOC&CC=US&NR=10859923B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bozkurt, Murat</creatorcontrib><creatorcontrib>Van Der Schaar, Maurits</creatorcontrib><creatorcontrib>Den Boef, Arie Jeffrey</creatorcontrib><creatorcontrib>Sanguinetti, Gonzalo Roberto</creatorcontrib><title>Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method</title><description>Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.</description><subject>ACCESSORIES THEREFOR</subject><subject>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</subject><subject>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbsKwkAQRbexEPUfxj6CJgimVRQbK7UOw2Y2Wck-2JkV_HuN-AFWtznn3Kl6XEj60EIw4Ag5J-s7QGBJWUtOVID1HEmLDR4wRkwomQsY7EfrEsbeauAXCzlA30JLT6sJHPpscCyMPff9mKuJwYFp8duZWp6Ot8N5RTE0xBE1eZLmft2sd9u6Lqt9Wf3DvAHtYkIC</recordid><startdate>20201208</startdate><enddate>20201208</enddate><creator>Bozkurt, Murat</creator><creator>Van Der Schaar, Maurits</creator><creator>Den Boef, Arie Jeffrey</creator><creator>Sanguinetti, Gonzalo Roberto</creator><scope>EVB</scope></search><sort><creationdate>20201208</creationdate><title>Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method</title><author>Bozkurt, Murat ; Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Sanguinetti, Gonzalo Roberto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10859923B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>ACCESSORIES THEREFOR</topic><topic>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</topic><topic>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Bozkurt, Murat</creatorcontrib><creatorcontrib>Van Der Schaar, Maurits</creatorcontrib><creatorcontrib>Den Boef, Arie Jeffrey</creatorcontrib><creatorcontrib>Sanguinetti, Gonzalo Roberto</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bozkurt, Murat</au><au>Van Der Schaar, Maurits</au><au>Den Boef, Arie Jeffrey</au><au>Sanguinetti, Gonzalo Roberto</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method</title><date>2020-12-08</date><risdate>2020</risdate><abstract>Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING |
| title | Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method |
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