Reactor for polycrystalline silicon production and method for producing polycrystalline silicon
A reactor 200 according to the present invention includes a heater storage section serving as a space section capable of accommodating a carbon heater to initial heating of silicon core wires. A carbon heater 13 is loaded in a deposition reaction space 20 in the reactor 200 only when necessary for i...
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| creator | Hoshino, Naruhiro Kurosawa, Yasushi Netsu, Shigeyoshi |
| description | A reactor 200 according to the present invention includes a heater storage section serving as a space section capable of accommodating a carbon heater to initial heating of silicon core wires. A carbon heater 13 is loaded in a deposition reaction space 20 in the reactor 200 only when necessary for initial heating of silicon core wires 12. After initial heating of the silicon core wires 12 is finished, the carbon heater 13 is unloaded from the deposition reaction space to the heater storage section 30. As a result, the carbon heater 13 is not unduly damaged in the reactor any longer and its deterioration is reduced. In addition, because of reduction in reaction with hydrogen gas in the reactor, the generation of methane is reduced, and thus carbon contamination of polycrystalline silicon is reduced. |
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A carbon heater 13 is loaded in a deposition reaction space 20 in the reactor 200 only when necessary for initial heating of silicon core wires 12. After initial heating of the silicon core wires 12 is finished, the carbon heater 13 is unloaded from the deposition reaction space to the heater storage section 30. As a result, the carbon heater 13 is not unduly damaged in the reactor any longer and its deterioration is reduced. 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A carbon heater 13 is loaded in a deposition reaction space 20 in the reactor 200 only when necessary for initial heating of silicon core wires 12. After initial heating of the silicon core wires 12 is finished, the carbon heater 13 is unloaded from the deposition reaction space to the heater storage section 30. As a result, the carbon heater 13 is not unduly damaged in the reactor any longer and its deterioration is reduced. In addition, because of reduction in reaction with hydrogen gas in the reactor, the generation of methane is reduced, and thus carbon contamination of polycrystalline silicon is reduced.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Reactor for polycrystalline silicon production and method for producing polycrystalline silicon |
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