Backup and/or restore of a memory circuit

Briefly, embodiments of claimed subject matter relate to backup of parameters, such as binary logic values, stored in nonvolatile memory, such as one or more SRAM cells. Binary logic values from a SRAM cell, for example, may be stored utilizing resistance states of a magnetic random-access memory (M...

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Hauptverfasser:	Jaiswal, Akhilesh Ramlaut, Lattimore, George McNeil, Bhargava, Mudit
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	Jaiswal, Akhilesh Ramlaut Lattimore, George McNeil Bhargava, Mudit
description	Briefly, embodiments of claimed subject matter relate to backup of parameters, such as binary logic values, stored in nonvolatile memory, such as one or more SRAM cells. Binary logic values from a SRAM cell, for example, may be stored utilizing resistance states of a magnetic random-access memory (MRAM) element. Parameters stored in one or more MRAM elements may be restored to SRAM memory cells following a backup.
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subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	Backup and/or restore of a memory circuit
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