MRAM array having reference cell structure and circuitry that reinforces reference states by induced magnetic field

A magnetic memory device that includes magnetic read elements and magnetic reference cells. The magnetic reference cells include magnetic tunnel junction elements having the same construction as the magnetic read elements. The reference cells produce a reference signal that can be compared with a re...

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Bibliographische Detailangaben

Hauptverfasser:	Bozdag, Kadriye Deniz, Kim, Kuk-Hwan, Ryan, Eric Michael
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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