Crucible
A crucible includes a wall made of a base material of tungsten or molybdenum or of a material based on tungsten or molybdenum. A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity...
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creator | Mark, Michael Schiftner, Robert Traxler, Hannes Knabl, Wolfram O'Sullivan, Michael Lorich, Alexander |
description | A crucible includes a wall made of a base material of tungsten or molybdenum or of a material based on tungsten or molybdenum. A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity for carbon and/or oxygen than the base material. A method for using a crucible for producing single-crystal sapphire or fused quartz and a method for producing a crucible for high-temperature applications are also provided. |
format | Patent |
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A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity for carbon and/or oxygen than the base material. A method for using a crucible for producing single-crystal sapphire or fused quartz and a method for producing a crucible for high-temperature applications are also provided.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201124&DB=EPODOC&CC=US&NR=10844518B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201124&DB=EPODOC&CC=US&NR=10844518B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mark, Michael</creatorcontrib><creatorcontrib>Schiftner, Robert</creatorcontrib><creatorcontrib>Traxler, Hannes</creatorcontrib><creatorcontrib>Knabl, Wolfram</creatorcontrib><creatorcontrib>O'Sullivan, Michael</creatorcontrib><creatorcontrib>Lorich, Alexander</creatorcontrib><title>Crucible</title><description>A crucible includes a wall made of a base material of tungsten or molybdenum or of a material based on tungsten or molybdenum. A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity for carbon and/or oxygen than the base material. A method for using a crucible for producing single-crystal sapphire or fused quartz and a method for producing a crucible for high-temperature applications are also provided.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBwLipNzkzKSeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYYGFiYmpoYWTkbGxKgBAHQNHEo</recordid><startdate>20201124</startdate><enddate>20201124</enddate><creator>Mark, Michael</creator><creator>Schiftner, Robert</creator><creator>Traxler, Hannes</creator><creator>Knabl, Wolfram</creator><creator>O'Sullivan, Michael</creator><creator>Lorich, Alexander</creator><scope>EVB</scope></search><sort><creationdate>20201124</creationdate><title>Crucible</title><author>Mark, Michael ; Schiftner, Robert ; Traxler, Hannes ; Knabl, Wolfram ; O'Sullivan, Michael ; Lorich, Alexander</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10844518B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Mark, Michael</creatorcontrib><creatorcontrib>Schiftner, Robert</creatorcontrib><creatorcontrib>Traxler, Hannes</creatorcontrib><creatorcontrib>Knabl, Wolfram</creatorcontrib><creatorcontrib>O'Sullivan, Michael</creatorcontrib><creatorcontrib>Lorich, Alexander</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mark, Michael</au><au>Schiftner, Robert</au><au>Traxler, Hannes</au><au>Knabl, Wolfram</au><au>O'Sullivan, Michael</au><au>Lorich, Alexander</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Crucible</title><date>2020-11-24</date><risdate>2020</risdate><abstract>A crucible includes a wall made of a base material of tungsten or molybdenum or of a material based on tungsten or molybdenum. A barrier layer is disposed at least in sections on an outer side of the wall and/or in the wall. The barrier layer is made of a metallic material having a greater affinity for carbon and/or oxygen than the base material. A method for using a crucible for producing single-crystal sapphire or fused quartz and a method for producing a crucible for high-temperature applications are also provided.</abstract><oa>free_for_read</oa></addata></record> |
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language | eng |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Crucible |
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