Methods of forming integrated circuits having parallel conductors

Methods of forming integrated circuits forming a first conductive structure at a first level of the integrated circuit, forming a first conductor at a second level of the integrated circuit to be in physical and electrical contact with the first conductive structure, forming a second conductor at th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sipani, Vishal, Yang, Ming-Chuan, Hansen, Tyler G
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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