Manufacturing method of memory device

A method for manufacturing a memory device is provided, the method includes the following steps: firstly, providing a dielectric layer, then simultaneously forming a contact window and an alignment mark trench in the dielectric layer, wherein the contact window exposes a lower metal line, then formi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Li, Kun-Ju, Shih, Yu-Lung, Liu, Hsin-Jung, Chan, Ang, Hou, Chau-Chung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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