CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-functio...
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| creator | Fan, Chih-Hsiang Kuok, Kun-Wa Wang, Yu-Sheng Lee, Da-Yuan Chiu, Ya-Wen Lee, Hsien-Ming Yang, Kai-Cyuan |
| description | A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations. |
| format | Patent |
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| title | CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same |
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