Tailoring current magnitude and duration during a programming pulse for a memory device

Technology for a memory device is described. The memory device can include an array of memory cells and a memory controller. The memory controller can receive a request to program a memory cell within the array of memory cells. The memory controller can select a current magnitude and a duration of t...

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Bibliographische Detailangaben

Hauptverfasser:	Rangan, Sanjay, Banerjee, Koushik, Liu, Lu
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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