Method of production of langatate-based single crystal and langatate-based single crystal
A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material so...
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| creator | Takahashi, Ikuo Kinoshita, Yoshitaka Aoki, Takayuki Nonogaki, Youichi |
| description | A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %. |
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That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201006&DB=EPODOC&CC=US&NR=10793968B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201006&DB=EPODOC&CC=US&NR=10793968B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Takahashi, Ikuo</creatorcontrib><creatorcontrib>Kinoshita, Yoshitaka</creatorcontrib><creatorcontrib>Aoki, Takayuki</creatorcontrib><creatorcontrib>Nonogaki, Youichi</creatorcontrib><title>Method of production of langatate-based single crystal and langatate-based single crystal</title><description>A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. 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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method of production of langatate-based single crystal and langatate-based single crystal |
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