Semiconductor device structure and method for forming the same

A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydroge...

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Hauptverfasser: Li, Jung-Jui, Chang, Ya-Lan, Chang, Chai-Wei, Chao, Yi-Cheng, Wu, Po-Chi
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Chang, Ya-Lan
Chang, Chai-Wei
Chao, Yi-Cheng
Wu, Po-Chi
description A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device structure and method for forming the same
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