Three-dimensional semiconductor memory devices

A three-dimensional semiconductor memory device includes common source regions, an electrode structure between the common source regions, first channel structures penetrating the electrode structure, and second channel structures between the first channel structures and penetrating the electrode str...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lee, Bongyong, Lim, Junhee, Choi, Moorym
Format: Patent
Sprache:eng
Schlagworte:
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