Nonvolatile memory device and operating method of the same

Nonvolatile memory device and operating method of the same

An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Nam, Sang-Wan, Jung, Won-Taeck, Gwak, So-Yeong
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Nam, Sang-Wan
Jung, Won-Taeck
Gwak, So-Yeong
description An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the selected memory cell by adjusting charge sharing between the selected memory cell and a sensing node, which is connected to the selected memory cell through a bit line.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10770148B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10770148B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10770148B23</originalsourceid><addsrcrecordid>eNrjZLDyy88ry89JLMnMSVXITc3NL6pUSEkty0xOVUjMS1HIL0gtAsrlpQPlSjLygQJpCiUZqQrFibmpPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPjTY0MDc3MDQxMLJyJgYNQB9-S8a</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Nonvolatile memory device and operating method of the same</title><source>esp@cenet</source><creator>Nam, Sang-Wan ; Jung, Won-Taeck ; Gwak, So-Yeong</creator><creatorcontrib>Nam, Sang-Wan ; Jung, Won-Taeck ; Gwak, So-Yeong</creatorcontrib><description>An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the selected memory cell by adjusting charge sharing between the selected memory cell and a sensing node, which is connected to the selected memory cell through a bit line.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200908&amp;DB=EPODOC&amp;CC=US&amp;NR=10770148B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200908&amp;DB=EPODOC&amp;CC=US&amp;NR=10770148B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nam, Sang-Wan</creatorcontrib><creatorcontrib>Jung, Won-Taeck</creatorcontrib><creatorcontrib>Gwak, So-Yeong</creatorcontrib><title>Nonvolatile memory device and operating method of the same</title><description>An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the selected memory cell by adjusting charge sharing between the selected memory cell and a sensing node, which is connected to the selected memory cell through a bit line.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDyy88ry89JLMnMSVXITc3NL6pUSEkty0xOVUjMS1HIL0gtAsrlpQPlSjLygQJpCiUZqQrFibmpPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPjTY0MDc3MDQxMLJyJgYNQB9-S8a</recordid><startdate>20200908</startdate><enddate>20200908</enddate><creator>Nam, Sang-Wan</creator><creator>Jung, Won-Taeck</creator><creator>Gwak, So-Yeong</creator><scope>EVB</scope></search><sort><creationdate>20200908</creationdate><title>Nonvolatile memory device and operating method of the same</title><author>Nam, Sang-Wan ; Jung, Won-Taeck ; Gwak, So-Yeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10770148B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Nam, Sang-Wan</creatorcontrib><creatorcontrib>Jung, Won-Taeck</creatorcontrib><creatorcontrib>Gwak, So-Yeong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nam, Sang-Wan</au><au>Jung, Won-Taeck</au><au>Gwak, So-Yeong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Nonvolatile memory device and operating method of the same</title><date>2020-09-08</date><risdate>2020</risdate><abstract>An operation method of a nonvolatile memory device includes applying a program voltage to a selected word line and programming a selected memory cell connected to the selected word line; reading an adjacent memory cell connected to an adjacent word line of the selected word line; and verifying the selected memory cell by adjusting charge sharing between the selected memory cell and a sensing node, which is connected to the selected memory cell through a bit line.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10770148B2
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title Nonvolatile memory device and operating method of the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T04%3A34%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Nam,%20Sang-Wan&rft.date=2020-09-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10770148B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true