Two-part programming methods

Method of operating a memory include increasing respective threshold voltages of a first subset of memory cells of a plurality of memory cells to threshold voltage levels higher than a particular voltage level in response to applying a first plurality of programming pulses, and subsequently increasi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Vahidimowlavi, Allahyar, Sarin, Vishal
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!