Method for manufacturing ultra-dense LED projector using thinned gallium nitride

A small projector uses an ultra-dense array of gallium nitride (GaN) LEDs. However, epitaxial growth of GaN typically produces a GaN region that is Sum or thicker. To achieve high pixel density, the LEDs have small area, so the resulting LED structures are tall and skinny. This is undesirable becaus...

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Bibliographische Detailangaben
Hauptverfasser: Choy, Kwong-Hin Henry, Martin, Paul Scott
Format: Patent
Sprache:eng
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