Polycrystalline material having low mechanical strain; method for producing a polycrystalline material
A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline mate...
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| creator | Hartlieb, Andreas Butz, Juergen Beintner, Jochen Stahl, Heiko |
| description | A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10766778B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10766778B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10766778B23</originalsourceid><addsrcrecordid>eNrjZEgLyM-pTC6qLC5JzMnJzEtVyE0sSS3KTMxRyEgsy8xLV8jJL1fITU3OSMzLTAaKFpcUJWbmWQOFSjLyUxTS8osUCoryU0qTQWoTFQpwmMbDwJqWmFOcyguluRkU3VxDnD10Uwvy41OLCxKTU_NSS-JDgw0NzM3MzM0tnIyMiVEDAA48QOM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Polycrystalline material having low mechanical strain; method for producing a polycrystalline material</title><source>esp@cenet</source><creator>Hartlieb, Andreas ; Butz, Juergen ; Beintner, Jochen ; Stahl, Heiko</creator><creatorcontrib>Hartlieb, Andreas ; Butz, Juergen ; Beintner, Jochen ; Stahl, Heiko</creatorcontrib><description>A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; MICROSTRUCTURAL TECHNOLOGY ; NON-METALLIC ELEMENTS ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200908&DB=EPODOC&CC=US&NR=10766778B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200908&DB=EPODOC&CC=US&NR=10766778B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hartlieb, Andreas</creatorcontrib><creatorcontrib>Butz, Juergen</creatorcontrib><creatorcontrib>Beintner, Jochen</creatorcontrib><creatorcontrib>Stahl, Heiko</creatorcontrib><title>Polycrystalline material having low mechanical strain; method for producing a polycrystalline material</title><description>A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgLyM-pTC6qLC5JzMnJzEtVyE0sSS3KTMxRyEgsy8xLV8jJL1fITU3OSMzLTAaKFpcUJWbmWQOFSjLyUxTS8osUCoryU0qTQWoTFQpwmMbDwJqWmFOcyguluRkU3VxDnD10Uwvy41OLCxKTU_NSS-JDgw0NzM3MzM0tnIyMiVEDAA48QOM</recordid><startdate>20200908</startdate><enddate>20200908</enddate><creator>Hartlieb, Andreas</creator><creator>Butz, Juergen</creator><creator>Beintner, Jochen</creator><creator>Stahl, Heiko</creator><scope>EVB</scope></search><sort><creationdate>20200908</creationdate><title>Polycrystalline material having low mechanical strain; method for producing a polycrystalline material</title><author>Hartlieb, Andreas ; Butz, Juergen ; Beintner, Jochen ; Stahl, Heiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10766778B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Hartlieb, Andreas</creatorcontrib><creatorcontrib>Butz, Juergen</creatorcontrib><creatorcontrib>Beintner, Jochen</creatorcontrib><creatorcontrib>Stahl, Heiko</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hartlieb, Andreas</au><au>Butz, Juergen</au><au>Beintner, Jochen</au><au>Stahl, Heiko</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Polycrystalline material having low mechanical strain; method for producing a polycrystalline material</title><date>2020-09-08</date><risdate>2020</risdate><abstract>A polycrystalline material having low mechanical strain is provided. The polycrystalline material includes one or multiple layers of a first type and one or multiple layers of a second type. The layers of the first type and the layers of the second type each include at least one polycrystalline material component. The layers of the first type have a smaller average crystal grain size than the layers of the second type, a layer of the first type and a layer of the second type being situated, at least in part, one above the other in an alternating sequence, and it being the case for the transition between the layers of the first type and the layers of the second type to be abrupt or continuous.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY MICROSTRUCTURAL TECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | Polycrystalline material having low mechanical strain; method for producing a polycrystalline material |
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