V-shape recess profile for embedded source/drain epitaxy
A semiconductor device includes a semiconductor base. A dielectric isolation structure is formed in the semiconductor base. A source/drain of a FinFET transistor is formed on the semiconductor base. A bottom segment of the source/drain is embedded into the semiconductor base. The bottom segment of t...
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| creator | Lin, Tzu-Ching Lin, Yih-Ann Chen, Chih-Shan Li, Chii-Horng Tai, Roger Lee, Yen-Ru |
| description | A semiconductor device includes a semiconductor base. A dielectric isolation structure is formed in the semiconductor base. A source/drain of a FinFET transistor is formed on the semiconductor base. A bottom segment of the source/drain is embedded into the semiconductor base. The bottom segment of the source/drain has a V-shaped cross-sectional profile. The bottom segment of the source/drain is separated from the dielectric isolation structure by portions of the semiconductor base. |
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| title | V-shape recess profile for embedded source/drain epitaxy |
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