Magnetoresistance effect device

Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position over...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Degawa, Naomichi
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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