Heat treatment method by light irradiation

A semiconductor wafer to be treated is placed on a susceptor made of quartz installed in a chamber, and is heated by light irradiation from halogen lamps. Before the first semiconductor wafer of a production lot is transported into the chamber, a preheating substrate is placed on the susceptor. Then...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Ono, Yukio
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!