Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same
An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substr...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Park, Jinhong Heo, Jinseok Bai, Keunhee Go, Heeyoung Hong, Seongchul |
| description | An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10754254B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10754254B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10754254B13</originalsourceid><addsrcrecordid>eNqNjLsKwkAQANNYiPoPa6eFYDTBXonYa2zDcrcxB_fidi_k81XwA6ymmGHmhW0mSeQIspWEowmWBDZN-9wCTTFwTgQYIyaUzIBegyMZgobQg0Ofe1SSk_EvYHJGBa-zkpBA02jU58pfJQMBo6NlMevRMq1-XBTra_O43HYUQ0ccUZEn6dp7uT_V1aGuzuXxn-YNSG5COA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same</title><source>esp@cenet</source><creator>Park, Jinhong ; Heo, Jinseok ; Bai, Keunhee ; Go, Heeyoung ; Hong, Seongchul</creator><creatorcontrib>Park, Jinhong ; Heo, Jinseok ; Bai, Keunhee ; Go, Heeyoung ; Hong, Seongchul</creatorcontrib><description>An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; X-RAY TECHNIQUE</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200825&DB=EPODOC&CC=US&NR=10754254B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25573,76557</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200825&DB=EPODOC&CC=US&NR=10754254B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Park, Jinhong</creatorcontrib><creatorcontrib>Heo, Jinseok</creatorcontrib><creatorcontrib>Bai, Keunhee</creatorcontrib><creatorcontrib>Go, Heeyoung</creatorcontrib><creatorcontrib>Hong, Seongchul</creatorcontrib><title>Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same</title><description>An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>X-RAY TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLsKwkAQANNYiPoPa6eFYDTBXonYa2zDcrcxB_fidi_k81XwA6ymmGHmhW0mSeQIspWEowmWBDZN-9wCTTFwTgQYIyaUzIBegyMZgobQg0Ofe1SSk_EvYHJGBa-zkpBA02jU58pfJQMBo6NlMevRMq1-XBTra_O43HYUQ0ccUZEn6dp7uT_V1aGuzuXxn-YNSG5COA</recordid><startdate>20200825</startdate><enddate>20200825</enddate><creator>Park, Jinhong</creator><creator>Heo, Jinseok</creator><creator>Bai, Keunhee</creator><creator>Go, Heeyoung</creator><creator>Hong, Seongchul</creator><scope>EVB</scope></search><sort><creationdate>20200825</creationdate><title>Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same</title><author>Park, Jinhong ; Heo, Jinseok ; Bai, Keunhee ; Go, Heeyoung ; Hong, Seongchul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10754254B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>X-RAY TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, Jinhong</creatorcontrib><creatorcontrib>Heo, Jinseok</creatorcontrib><creatorcontrib>Bai, Keunhee</creatorcontrib><creatorcontrib>Go, Heeyoung</creatorcontrib><creatorcontrib>Hong, Seongchul</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Jinhong</au><au>Heo, Jinseok</au><au>Bai, Keunhee</au><au>Go, Heeyoung</au><au>Hong, Seongchul</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same</title><date>2020-08-25</date><risdate>2020</risdate><abstract>An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10754254B1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS X-RAY TECHNIQUE |
| title | Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-01T19%3A57%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Park,%20Jinhong&rft.date=2020-08-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10754254B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |