Semiconductor devices having metal posts for stress relief at flatness discontinuities

A semiconductor device includes a first body having a first coefficient of thermal expansion (CTE) and a first surface, a third body having a third CTE and a third surface facing the first surface, and a fourth surface at an angle with respect to the third surface defining an edge of the third body,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Williamson, Jaimal Mallory, Li, Guangxu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!