Resistive memory device and method of manufacturing the resistive memory device

A resistive memory device may include a plurality of MATs, row control blocks, a plurality of word lines, a plurality of bit lines and memory cells. Each of the row control blocks may be interposed between the MATs. Each of the row control blocks may include a control element. The word lines may be...

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Bibliographische Detailangaben

Hauptverfasser:	Song, Myung Sun, Yim, Hyuck Sang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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