Decoupling capacitors using regularity finFET structures and methods for making same

A semiconductor apparatus includes a first device cell and a second device cell. The first device cell includes a first active region including a first set of device fins, an insulator layer disposed over the first set of device fins, a first gate fin over the first set of fins, and a first edge fin...

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Bibliographische Detailangaben

Hauptverfasser:	Tipple, David Russell, Hall, Mark Douglas, Jarrar, Anis Mahmoud
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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