Method for producing silicon single crystal

A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon...

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1. Verfasser:	Kim, Tegi
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	Kim, Tegi
description	A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon melt; and pulling up the seed crystal to grow monocrystalline silicon. In the pulling-up, a formation of a straight body of the monocrystalline silicon is started at a power consumption of the heating unit being equal to or more than 10000 kWh to grow an entirety of the monocrystalline silicon.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10711368B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10711368B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10711368B23</originalsourceid><addsrcrecordid>eNrjZND2TS3JyE9RSMsvUigoyk8pTc7MS1cozszJTM7PA9J56TmpCslFlcUliTk8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-NNjQwNzQ0NjMwsnImBg1AHlxKcQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for producing silicon single crystal</title><source>esp@cenet</source><creator>Kim, Tegi</creator><creatorcontrib>Kim, Tegi</creatorcontrib><description>A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon melt; and pulling up the seed crystal to grow monocrystalline silicon. In the pulling-up, a formation of a straight body of the monocrystalline silicon is started at a power consumption of the heating unit being equal to or more than 10000 kWh to grow an entirety of the monocrystalline silicon.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200714&DB=EPODOC&CC=US&NR=10711368B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200714&DB=EPODOC&CC=US&NR=10711368B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Tegi</creatorcontrib><title>Method for producing silicon single crystal</title><description>A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon melt; and pulling up the seed crystal to grow monocrystalline silicon. In the pulling-up, a formation of a straight body of the monocrystalline silicon is started at a power consumption of the heating unit being equal to or more than 10000 kWh to grow an entirety of the monocrystalline silicon.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2TS3JyE9RSMsvUigoyk8pTc7MS1cozszJTM7PA9J56TmpCslFlcUliTk8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-NNjQwNzQ0NjMwsnImBg1AHlxKcQ</recordid><startdate>20200714</startdate><enddate>20200714</enddate><creator>Kim, Tegi</creator><scope>EVB</scope></search><sort><creationdate>20200714</creationdate><title>Method for producing silicon single crystal</title><author>Kim, Tegi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10711368B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tegi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Tegi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for producing silicon single crystal</title><date>2020-07-14</date><risdate>2020</risdate><abstract>A manufacturing method of monocrystalline silicon includes: melting silicon housed in a quartz crucible into a silicon melt by heating the quartz crucible with a heating unit; dipping a seed crystal into the silicon melt in the quartz crucible to bring the seed crystal into contact with the silicon melt; and pulling up the seed crystal to grow monocrystalline silicon. In the pulling-up, a formation of a straight body of the monocrystalline silicon is started at a power consumption of the heating unit being equal to or more than 10000 kWh to grow an entirety of the monocrystalline silicon.</abstract><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_epo_espacenet_US10711368B2
source	esp@cenet
subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	Method for producing silicon single crystal
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T19%3A45%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Tegi&rft.date=2020-07-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10711368B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true