Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

Techniques are disclosed for fabricating a self-aligned spin-transfer torque memory (STTM) device with a dot-contacted free magnetic layer. In some embodiments, the disclosed STTM device includes a first dielectric spacer covering sidewalls of an electrically conductive hardmask layer that is patter...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Doczy, Mark L, Doyle, Brian S, Kuo, Charles C, Kencke, David L, Chau, Robert S, Oguz, Kaan, Suri, Satyarth
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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