Three-dimensional memory device including locally thickened electrically conductive layers and methods of manufacturing the same

Three-dimensional memory device including locally thickened electrically conductive layers and methods of manufacturing the same

Fabricating a three-dimensional memory device may include forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Stepped surfaces are formed by patterning the alternating stack. Sacrificial pads are formed on physically exposed horizontal surfaces of the...

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Hauptverfasser: Otsu, Yoshitaka, Hojo, Naoto, Tabira, Takahiro
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Otsu, Yoshitaka
Hojo, Naoto
Tabira, Takahiro
description Fabricating a three-dimensional memory device may include forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Stepped surfaces are formed by patterning the alternating stack. Sacrificial pads are formed on physically exposed horizontal surfaces of the sacrificial material layers. A retro-stepped dielectric material portion is formed over the sacrificial pads. After memory stack structures extending through the alternating stack are formed, the sacrificial material layers and the sacrificial pads can be replaced with replacement material portions that include electrically conductive layers. The electrically conductive layers can be formed with thicker end portions. Contact via structures can be formed on the thicker end portions.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Three-dimensional memory device including locally thickened electrically conductive layers and methods of manufacturing the same
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