Self-aligned low dielectric constant gate cap and a method of forming the same

According to an embodiment of the present invention, self-aligned gate cap, comprises a gate located on a substrate; a gate cap surrounding a side of the gate; a contact region self-aligned to the gate; and a low dielectric constant oxide having a dielectric constant of less than 3.9 located on top...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pranatharthiharan, Balasubramanian, Surisetty, Charan V. V. S, Ok, Injo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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