Protection of high-K dielectric during reliability anneal on nanosheet structures
A starting structure for forming a gate-all-around field effect transistor (FET) and a method of fabricating the gate-all-around FET. The method includes forming a stack of silicon nanosheets above a substrate forming an interfacial layer over the nanosheets depositing a high-k dielectric layer conf...
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Zusammenfassung: | A starting structure for forming a gate-all-around field effect transistor (FET) and a method of fabricating the gate-all-around FET. The method includes forming a stack of silicon nanosheets above a substrate forming an interfacial layer over the nanosheets depositing a high-k dielectric layer conformally on the interfacial layer. The method also includes depositing a layer of silicon nitride (SiN) above the high-k dielectric layer and performing reliability anneal after depositing the layer of SiN to crystalize the high-k dielectric layer. |
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