Method and apparatus for X-ray scatterometry

A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of...

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Hauptverfasser: Krokhmal, Alex, Vinshtein, Juri, Dikopoltsev, Alex
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creator Krokhmal, Alex
Vinshtein, Juri
Dikopoltsev, Alex
description A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of the asymmetry is reduced relative to the first distribution. One or more parameters of the sample are estimated based on the second distribution.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10684238B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10684238B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10684238B23</originalsourceid><addsrcrecordid>eNrjZNDxTS3JyE9RSMwD4oKCxKLEktJihbT8IoUI3aLESoXi5MSSktSi_NzUkqJKHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxpsaGBmYWJkbOFkZEyMGgCQkCn6</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for X-ray scatterometry</title><source>esp@cenet</source><creator>Krokhmal, Alex ; Vinshtein, Juri ; Dikopoltsev, Alex</creator><creatorcontrib>Krokhmal, Alex ; Vinshtein, Juri ; Dikopoltsev, Alex</creatorcontrib><description>A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of the asymmetry is reduced relative to the first distribution. One or more parameters of the sample are estimated based on the second distribution.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200616&amp;DB=EPODOC&amp;CC=US&amp;NR=10684238B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200616&amp;DB=EPODOC&amp;CC=US&amp;NR=10684238B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Krokhmal, Alex</creatorcontrib><creatorcontrib>Vinshtein, Juri</creatorcontrib><creatorcontrib>Dikopoltsev, Alex</creatorcontrib><title>Method and apparatus for X-ray scatterometry</title><description>A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of the asymmetry is reduced relative to the first distribution. One or more parameters of the sample are estimated based on the second distribution.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxTS3JyE9RSMwD4oKCxKLEktJihbT8IoUI3aLESoXi5MSSktSi_NzUkqJKHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxpsaGBmYWJkbOFkZEyMGgCQkCn6</recordid><startdate>20200616</startdate><enddate>20200616</enddate><creator>Krokhmal, Alex</creator><creator>Vinshtein, Juri</creator><creator>Dikopoltsev, Alex</creator><scope>EVB</scope></search><sort><creationdate>20200616</creationdate><title>Method and apparatus for X-ray scatterometry</title><author>Krokhmal, Alex ; Vinshtein, Juri ; Dikopoltsev, Alex</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10684238B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Krokhmal, Alex</creatorcontrib><creatorcontrib>Vinshtein, Juri</creatorcontrib><creatorcontrib>Dikopoltsev, Alex</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Krokhmal, Alex</au><au>Vinshtein, Juri</au><au>Dikopoltsev, Alex</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for X-ray scatterometry</title><date>2020-06-16</date><risdate>2020</risdate><abstract>A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of the asymmetry is reduced relative to the first distribution. One or more parameters of the sample are estimated based on the second distribution.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title Method and apparatus for X-ray scatterometry
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T08%3A54%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Krokhmal,%20Alex&rft.date=2020-06-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10684238B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true